INTERFACE AND BULK PHENOMENA IN SOLID STATE SCIENCE.

Abstract

The electrical properties of surface states at the interface of silicon diodes and silicon have been studied using the small signal admittance measurements on metal-oxide-silicon capacitor structures over wide ranges of signal frequency, temperature, oxide thickness and oxidation conditions. Ellipsometry techniques are set up for the thin oxide region. Detailed studies have been made to correlate the 1/f noise power spectra with interface state density and carrier cross-sections. Orientation and size effects of carrier scattering at the interface have been observed from 4 to 300 degrees K and correlated with the quantum and classical models, including mobility anisotropy. A two dimensional analysis of the saturation electrical characteristics of surface channel and surface field-effect transistor structures has been verified by experiments. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 14, 1969
Accession Number
AD0696258

Entities

People

  • C. T. Sah

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electrical Properties
  • Field Effect Transistors
  • Metal Oxides
  • Oxidation
  • Oxides
  • Power Spectra
  • Scattering
  • Spectra
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing