PRODUCTION OF NONEQUILIBRIUM PLASMAS IN INDIUM ANTIMONIDE,
Abstract
Electrons and holes in excess of their thermal equilibrium density are generally produced in a semiconductor by one (or more) of these three means: (1) electrical injection, (2) optical injection, or (3) impact ionization. If the excess carrier density so produced is large compared with the recombination center density, a 2-component, electron-hole plasma results which is analogous to an electron-ion plasma. The work described here is motivated by the desire to obtain a fundamental understanding of electron-hole plasmas in their transient state and nonequilibrium steady-state. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1969
- Accession Number
- AD0696294
Entities
People
- Betsy Ancker-johnson
Organizations
- Boeing