EFFECT OF GAMMA RADIATION ON THE MICROHARDNESS OF Ge AND Si SINGLE CRYSTALS,

Abstract

The dependence of the microhardness of materials on such factors as the extent of perfection of crystal lattices, degree of purity of the samples, and the condition of the surface is studied. Results on the effects of gamma-irradiation on the microhardness of single crystals of Ge and Si are reported. It is shown that the magnitude of hardness obeys a given formula. Curves are plotted of: (1) relative fluctuation of microhardness versus the gamma-ray dosage; (2) isothermic annealing of defects generated by gamma-ray irradiation for various temperatures, and (3) variation of the logarithm of the annealing time for a definite fraction of defects versus the temperature. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 05, 1969
Accession Number
AD0696316

Entities

People

  • D. K. Kaipnazarov
  • I. A. Domoryad

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Annealing
  • Crystal Lattices
  • Crystals
  • Engineered Materials
  • Gamma Rays
  • Hardness
  • Materials
  • Microhardness
  • Radiation
  • Single Crystals

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.