A RADIATION EFFECTS RESEARCH PROGRAM UNDER THE PROJECT THEMIS.
Abstract
Radiation effects research has been directed toward basic problems with dielectric materials, semiconductor materials, and solid-state devices, such as: Electron transport in a one-dimensional solid, Small-signal s-parameters for high-frequency transistors, Light-emitting diodes, laser diodes, and the gallium-arsenide material used in the construction of the diodes, Technology for making micro-Hall devices, Metal-oxide-silicon capacitors with guard rings, Dielectric Hall effect devices of microcircuit size, Avalanche theory, Four-layer silicon-controlled rectifiers, Schottky barrier diodes fabricated on silicon and gallium phosphide, and Fabrication of small radiation-resistant devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1969
- Accession Number
- AD0696680
Entities
People
- H. D. Southward
- L. T. Boatwright
- R. C. Allen Jr.
- W. J. Byatt
- Wayne W. Grannemann
Organizations
- University of New Mexico