LOW TEMPERATURE STUDIES OF RADIATION DAMAGE IN SEMICONDUCTORS.
Abstract
A detailed study of annealing states of n-type Germanium irradiated by electrons at low temperatures was performed through the use of stored energy measurements, photoconductivity, fast pulse annealing and conventional resistivity measurements. The effect of illumination on the annealing rate has been observed. It was found, mainly, that the 65K annealing stage kinetics suggest a rate limited process. No direct influence of the chemical nature of dopant impurities has been found. Illumination shifts this stage down to 20K, indicating that, through an electronic process, one element of the defect pair is mobile. Photoconductivity, effect of uniaxial stress and stored energy measurements was performed on Boron and Aluminum doped Silicon, irradiated between 4K and 300K by 1 to 3 MeV electrons. A level at 0.395 (Aluminum) or 0.430 (Boron) is introduced at room temperature as well as at 4.2K, and anneals around 300C. It is suggested that the defect is a boron interstitial with a trigonal symmetry. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1969
- Accession Number
- AD0696681
Entities
People
- A. Brelot
- J. Bourgoin
- John Fischer
- M. Cherki
- P. Baruch
Organizations
- École Normale Supérieure