INTERFACE PHENOMENA INTEGRATING CIRCUIT OXIDES.
Abstract
The instability in MIS devices, arising due to mobile positive ions in the insulator layer is investigated using photoelectric layer. A direct measurement of the built-in voltage in the MIS structure, viz., the voltage existing across the insulator due to interface effects, has been shown to be possible using the photoelectric technique. It was found that the built-in voltage differs by 0.85 volts between the degenerate n and p type samples under identical conditions. The built-in voltage is also a function of the spatial distribution of positive ions in the insulator layer. Using the values of the built-in voltage, interface photoelectric technique. It was found that the built-in voltage differs by 0.85 volts between the degenerate n and p type samples under identical conditions. The built-in voltage is also a function of the spatial distribution of positive ions in the insulator layer. Using the values of the built-in voltage, interface photoelectric threshold, the energy band diagram of the MOS structure is constructed. The feasibility of using the extension of long wavelength response of photodetectors using Franz-Keldysh effect was also studied. It was concluded that the shift is too small to be of any practical value. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1969
- Accession Number
- AD0697147
Entities
People
- Cadambanguri R. Viswanathan
Organizations
- University of California, Los Angeles