INTERDIFFUSION IN LEAD SELENIDE.

Abstract

A theoretical model was developed to explain the movement of a p-n junction in PbSe by the interdiffusion process. This model, which is a modification of an interdiffusion theory due to Brebrick, has one value for the diffusion coefficient in p-type material and another value in n-type material. Solutions to the diffusion equation for this model are obtained and compared to experimental interdiffusion data for PbSe at 400C obtained by the p-n junction method. The significance of the results to device fabrication and annealing is discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1969
Accession Number
AD0697303

Entities

People

  • Arthur R. Calawa
  • James N. Walpole
  • Robert W. Brodersen

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Annealing
  • Boltzmann Equation
  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Equations
  • Fabrication
  • Materials
  • Mathematics
  • P-N Junctions

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
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  • Thin Film Deposition Science.