METHODS OF SiC SURFACE AND p-n JUNCTION TREATMENT,

Abstract

Etchants for alpha SiC crystals and rectifying junctions were examined. The optimum dissolution rate and the best surface quality were obtained with 4KNO3 plus 1KOH; 2KNO3 plus 1K2 SO4 plus 1KOH; 1KNO3 plus 1NA2 CO3 plus 1KOH. Etching was conducted in a nickel crucibel in air at a temperature of 700-750 degrees C. The quality of the etched surface was checked on an electron diffraction camera by reflective photography. Etching gave optimum results in the melted mixture 5NA2 O2 plus 7NaCl plus 5KOH. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 19, 1969
Accession Number
AD0697569

Entities

People

  • G. M. Afanaseva
  • I. V. Ryzhikov
  • T. G. Kmita
  • V. I. Pavlichenko

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Cameras
  • Carbides
  • Compound Semiconductors
  • Diffraction
  • Electron Diffraction
  • Electrons
  • Optical Equipment
  • P-N Junctions
  • Photographic Equipment
  • Photographic Materials
  • Photographic Recording Media
  • Photography
  • Semiconductors
  • Silicon
  • Silicon Carbide

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene