ELECTRICAL AND OPTICAL PROPERTIES OF LEAD-TIN-TELLURIDE SEMICONDUCTING ALLOYS.
Abstract
Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or < x = or <1 in a new type thin film evaporator. The relationship between lattice constant and composition has been studied for this alloy system. The electrical resistivity and Hall coefficient of the Pb(x)Sn(1-x) alloys were determined as a function of temperature from 4.2 to 300 degrees K. The results of these measurements strongly support the band-inversion model. Reflectivity measurements were made in the 1-15 micron region of the spectrum on four bulk-single crystals of SnTe at 300, 80, and 10 degrees K. Among the quantities extracted from analyzing this data in terms of a free carrier dispersion model was the electric susceptibility mass. Its temperature and carrier concentration dependences are compared with those expected on the basis of the current band models proposed for this material. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 03, 1969
- Accession Number
- AD0697647
Entities
People
- Jack R. Dixon
- Richard F. Bis
Organizations
- Naval Ordnance Laboratory