INVESTIGATION OF SURFACE DEFECTS IN SEMICONDUCTORS.

Abstract

The surface states of p- and n-channel insulated gate field effect transistor (IGFET) devices have been studied by monitoring the temperature dependence of the relaxation times of the gate-to-substrate capacitance transients. Surface states in the Si-Si02 interface of these devices, found by this technique, are characterized by discrete energy levels in the forbidden band and cross sections ranging from 10 to the -14th power to 10 to the -19th power/sq.cm. Some of these states are tentatively assigned to vacancies V associated with interstitial oxygen (v + Oi), substitutional boron (V + Bs), or a neighboring vacancy (V + V), whereas others are associated with defects still not completely identified. Agreement with energy-band theories of thermally oxidized silicon is found for some of these states. Lack of agreement for others is attributed to the influence of source and drain sections and background continuous surface states. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1969
Accession Number
AD0697827

Entities

People

  • Georg Rupprecht
  • Gholam-hossein Azarbayejani

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Agreements
  • Band Gaps
  • Band Structures
  • Band Theory Of Solids
  • Energy Bands
  • Energy Levels
  • Field Effect Transistors
  • Relaxation Time
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene