COMPUTER AIDED ANALYSIS OF INSULATED GATE FIELD EFFECT TRANSISTORS.
Abstract
The classical analysis of Insulated Gate Field-Effect Transistors (IGFET) is reviewed and the corresponding theory is compared with experimental characteristics. The limitations of this theory are indicated and the reasons for the limitations are explained in terms of the device physics. Two operating configurations which do not comply with the classical theory are subsequently analyzed with the aid of a digital computer; these are low-level current operation for gate voltages near threshold, and punch-through operation for short devices. The numerical data obtained from the low-level analysis is compared with experimental V-I characteristics, and it is shown that the device can be accurately modeled using the classical surface physics equations. Algebraic approximations, which offer certain advantages over numerical analysis, are shown to adequately describe transistor operation over certain current ranges. Derivations of the finite difference equations for numerical iterative analysis of the IGFET are described in detail. Certain stability problems are found to occur and methods for avoiding these are presented. Results of the analyses of short-channel devices are presented in the form of three-dimensional projections of the potential and carrier distributions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1969
- Accession Number
- AD0699935
Entities
People
- Mark B. Barron
Organizations
- Stanford University