INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.
Abstract
The indium-arsenide-phosphide system was studied further. Several highly doped InP ingots were prepared and evaluated. Revised power and efficiency figures for the InAs(1-x)Px diode lasers prepared previously are given. The interaction of 1.06 micron light from one of these InAs(1-x)Px diodes with a neodymium-doped glass fiber was studied. A light amplitude amplification of 47 dB or approximately 50,000 was obtained, showing the feasibility of obtaining modulated 1.06 micron light in this manner. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1969
- Accession Number
- AD0699949
Entities
People
- Alan G. Thompson
- Bernd Ross