PREPARATION OF BULK GALLIUM ARSENIDE MATERIAL.
Abstract
A review is made of recent progress and advances in the state-of-the-art in the bulk growth of gallium arsenide using the Czochralski, floating zone, Bridgman, and gradient freeze techniques and modifications. Facts which influence crystal growth such as growth rate, shape of liquid-solid interface, particle nucleation, vibration and temperature control are discussed in relation to the design of a crystal growing apparatus. The advantages and disadvantages of each of the above techniques are noted and the most recent results in terms of mobilities and/or dislocation densities achieved in gallium arsenide are indicated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1969
- Accession Number
- AD0700134
Entities
People
- Kenneth L. Klohn
- Lothar Wandinger
Organizations
- United States Army Communications-Electronics Command