ENERGY BAND QUANTIZATION IN HIGH ELECTRIC FIELDS.

Abstract

The electric field induced effect upon the optical transmission of semi-insulating gallium arsenide has been measured for photon energies of 1.455 to 1.48 eV. Electric fields up to approximately 100,000 V/cm were applied to two samples, approximately 40 microns in thickness at 85 degrees K and 15 degrees K. The experimental data agrees favorably with the theory of Callaway (Franz-Keldish Effect). The presence of the Wannier Levels, however, has not been observed. A technique for fabricating a sample package which is theoretically capable of withstanding electric field strength in excess of 100,000 V/cm is also discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1969
Accession Number
AD0700438

Entities

People

  • Lloyd M. Lambert Jr.
  • Robert Koss

Organizations

  • University of Vermont

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Electric Fields
  • Elements
  • Energy Bands
  • Experimental Data
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Metals
  • Physical Properties
  • Post-Transition Metals
  • Thickness

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Science - Quantum Dots