ACADEMY OF SCIENCES OF THE USSR, INSTITUTE OF CRYSTALLOGRAPHY, GROWTH OF CRYSTALS (SELECTED ARTICLES),
Abstract
Contents: The effect of anisotropy of properties of semiconductor crystals on segregation of impurities in a growing crystal; Mechanism of the oriented growth of crystalline substances (epitaxy); Deviation from Homogeneity in single crystals of gallium phosphide-gallium arsenide solid solutions grown by the epitaxial method; Some instances of change in the habit of crystals during epitaxial growth; Kinetics of the spontaneous transformation of the surface of a crystal-vapor system; and Growth and dislocation models of crystals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 06, 1969
- Accession Number
- AD0700807
Entities
People
- D. Nenov
- I. Bonev
- U. M. Kulish
- V. N. Maslov
- Yu. D. Chistyakov
Organizations
- National Air and Space Intelligence Center