MAXIMUM RF POWER TRANSISTOR COLLECTOR VOLTAGE.
Abstract
The RF operating voltage of power transistors designed for operation in HF, VHF and UHF regions was found to be greater than previously realized. This higher operating voltage is attributed to the slow response of the device surface with respect to the operating frequency of the circuit. Since most devices have breakdown voltages which are initially surface limited, their voltage operation at the higher frequencies is superior to the 60-cycle curve tracer behavior. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1970
- Accession Number
- AD0700952
Entities
People
- Bernard Reich
- Edward B. Hakim
- Gregory J. Malinowski
Organizations
- United States Army Communications-Electronics Command