EFFECT OF GROWTH RATE ON THE STRUCTURE AND STACKING DISORDER OF SiC CRYSTAL GROWN BY THE LELY METHOD,

Abstract

The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1969
Accession Number
AD0701010

Entities

People

  • Hiroshi Komatsu
  • Mamoru Mitomo
  • Yoshizo Inomata
  • Zenzaburo Inoue

Organizations

  • Emmanuel College

Tags

DTIC Thesaurus Topics

  • Crystallization
  • Crystals
  • Dielectrics
  • Diseases And Disorders
  • Isothermal Processes
  • Recrystallization
  • Saturation

Readers

  • Marine Propulsion Engineering and Naval Architecture
  • Materials Science and Engineering.
  • Medical Imaging.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene