P-MOS ARRAY OF OPTICALLY CONTROLLED DIGITAL CIRCUITS.
Abstract
A p-MOS array was developed which included four photosensor-amplifier circuits (each having a different size photodiode), an optically controlled flip-flop, and an optically loadable memory cell. The photodiodes in the p-MOS arrays had a quantum efficiency of about unity for visible and near-infrared illumination, and a dark current density of less than 20 nA/sq cm. The minimum optical energy necessary for a reliable detection by the proposed p-MOS photosensors can be expressed in terms of the photocurrent charge as 2 x 10 to the -14th power coulombs per square mil of the photodiode area. For an optical signal with a wavelength of about 6000 A this corresponds to a flux energy of about 10 nJ/sq cm incident on the photodiodes. These results demonstrate that arrays of optically controlled p-MOS digital circuits having predictable operating characteristics can be fabricated by a standard p-MOS process. These tests also showed that excellent quality photodiodes can be made without any additional steps in the p-MOS process, and that the yield of the p-MOS arrays is not affected by the presence of the photodiodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1969
- Accession Number
- AD0701062
Entities
People
- Walter F. Kosonocky
Organizations
- RCA Corporation