NEGATIVE CONDUCTIVITY IN SOLID STATE AVALANCHE DIODES

Abstract

A new and useful parameter (sigma) for avalanche diodes is obtained which possesses the properties associated with negative conductivity. It is shown how sigma unifies the description of various aspects of device behavior such as diode impedance Z, total current, and the effect of device radius on performance. A greatly simplified, approximate formula for Z is obtained, in terms of sigma, which predicts reasonably well the significant trends, zero- crossings, and peaks.

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Document Details

Document Type
Technical Report
Publication Date
Dec 16, 1969
Accession Number
AD0701395

Entities

People

  • Henry Berger

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Avalanche Diodes
  • Boundaries
  • Conductivity
  • Crossings
  • Current Density
  • Diodes
  • Dispersion Relations
  • Electric Fields
  • Electrons
  • Frequency
  • Impatt Diodes
  • Impedance
  • Massachusetts
  • Materials
  • Resistance

Readers

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