THERMODYNAMICS OF THE FIELD-EFFECT.

Abstract

A new thermodynamic field-effect transistor theory is developed. The ultra-high frequency performance, power gain and switching speed of insulated gate as well as pn-junction field-effect transistors are derived under thermal constraints. Several practical device configurations are treated and their maximum frequency performance analyzed. Furthermore instabilities are related to the temperature distribution change with time in the device channel. A semiexperimental technique to quickly determine the maximum frequency performance of any device configuration is demonstrated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1970
Accession Number
AD0701410

Entities

People

  • Horst Kunig

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Frequency
  • Gain
  • Instability
  • P-N Junctions
  • Power Gain
  • Semiconductor Devices
  • Solid State Electronics
  • Switching
  • Thermodynamics
  • Transistors

Fields of Study

  • Physics

Readers

  • Adaptive Control and Estimation with Uncertainty in Dynamic Systems.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics