R. F. SPUTTERED QUARTZ DIELECTRIC CAPACITORS,
Abstract
Radio frequency sputtering was used to deposit quartz films for use as the dielectric in thin film capacitors. Experiments are described in which the performance of the capacitors was assessed. Capacitances up to 250 microfarads/sq m were achieved with reasonably low loss (tan delta < approximately 0.005) at frequencies below 1 MHz. Above 1 MHz loss increased linearly with frequency. Temperature coefficients of capacitance approximately + 120 ppm/C were measured, and the humidity sensitivity of the devices investigated briefly. Loss mechanisms and dielectric defects are discussed, and future lines of investigation towards improvement are suggested. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1969
- Accession Number
- AD0701472
Entities
People
- B. J. Franklin