METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS CONTROL, AND DEVICES.
Abstract
The report describes activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Principal emphasis is placed on measurement of resistivity, carrier lifetime, and electrical inhomogeneities in semiconductor crystals; evaluation of wire bonds; and measurement of thermal properties of semiconductor devices. Other tasks involve study of infrared measurement methods, deep-lying impurities in InSb, and gold in silicon; establishment of a processing facility; evaluation of aluminum metallization and wafer die attachment; review of NASA measurement methods; and measurement of Hall effect in semiconductor crystals, second breakdown in transistors, and properties of microwave devices. Related projects on silicon nuclear radiation detectors and specification of germanium are also described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1970
- Accession Number
- AD0702833
Entities
People
- W. Murray Bullis
Organizations
- National Institute of Standards and Technology