USING THE CREEPING-BOUNDARY IN THIN MAGNETIC FILMS FORM CONSTRUCTION OF AN ELECTRONIC COMPUTER MEMORY ELEMENT,

Abstract

When a thin magnetic film is subjected to an alternating magnetic field along the hard-magnetization axis and a constant magnetic field along the easy-magnetization axis, the domain boundaries begin to creep at fields much lower than the critical fields required for domain shifting. The following method of constructing storage devices is suggested: magnetic films are deployed in the form of a rectangular matrix with their easy axes directed along numeral trunks and their hard axes, along digit trunks. A nondestructive sensing the information recorded on an uniaxial-anisotropy film by a transverse field is possible. The threshold field required for magnetic-creep switching is inversely dependent on the switching-pulse duration. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 18, 1969
Accession Number
AD0703016

Entities

People

  • S. K. Dementev
  • V. A. Kostyakov
  • V. I. Efremov

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Anisotropy
  • Boundaries
  • Computers
  • Construction
  • Films
  • Magnetic Fields
  • Magnetic Films
  • Magnetization
  • Switching
  • Transverse

Fields of Study

  • Physics

Readers

  • Computer Programming and Software Development.
  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics