PHYSICAL CHARACTERIZATION OF ELECTRONIC MATERIALS, DEVICES AND THIN FILMS
Abstract
Experimental methods include chemical analysis, reflection electron diffraction, X-ray diffraction and fluorescence analysis, light microscopy and electron probe microanalysis, in addition to the determination of specific properties, such as density, hardness and thermal conductivity. Special services such as crystal orientation, cutting, grinding and polishing, are also being performed. Specific materials submitted for characterization include spinel, cobalt, silicide, lithium germanate, silicon, mercury sulfide, cadmium sulfide, silicon carbide, quartz, ruby, calcite, magnesium oxide, cesium copper chloride, gallium arsenide, boron, potassium tantalum niobate, alundum, yttrium-iron garnet, yttrium-aluminum gasket, germanium and lithium niobate. In addition, a variety of specimens were submitted for specific studies such as phase identification, crystallinity and chemical analysis. High pressure experiments were carried out on Al-S and Al-Se alloys to produce tetrahedral, unsymmetrical Group IV analogs. Two new compounds, delta Al2S3 and delta Al2Se3, were synthesized at pressures of 7 to 50 Kb at temperatures of 800 to 875C. Both compounds have the cubic defect spinel structure of alpha Al2O3. The synthesis experiments pointed out the presence of tetrahedral-to-octahedral coordination densification transformations which compete with the high pressure synthesis of new tetrahedral Group IV analog compounds.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1970
- Accession Number
- AD0703275
Entities
People
- Edward T. Peters
- Edward V. Clougherty
- Konstantin Kreder
- S. A. Kulin