MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS.
Abstract
The report outlines the results of the following mathematical investigations completed under the present contract: The junction field-effect transistor; The high-low semiconductor junction; The diffused semiconductor resistor; Measurement of impurity atom distributions by the differential capacitance technique; Electrical properties of very narrow-base diffused bipolar transistors; and Impurity atom diffusion of arsenic into silicon. Two of the investigations (junction field-effect transistor, and diffused semiconductor resistor) were conducted in two spatial dimensions, which include the mixed boundary conditions encountered at the surface of a semiconductor device; the others are in one spatial dimension. Each of these investigations is directed toward the solution of well recognized problems in the field of semiconductor device physics. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1970
- Accession Number
- AD0703734
Entities
People
- David P. Kennedy
Organizations
- International Business Machines Corporation (Armonk, NY)