COMPLEMENTARY BIPOLAR DEVICES.

Abstract

The fabrication of monolithic complementary bipolar switching transistors which are dielectrically isolated is described and the electrical characteristics of the devices are evaluated. The preparation of dielectrically isolated material with N on N+ and P on P+ collector regions is presented along with the diffusion processing used to fabricate the NPN and the PNP transistors in this material. The electrical characteristics of the complementary device pairs obtained are reported. The matching of the electrical parameters of these complementary device pairs is discussed. The variation in the parameter matching with temperature and device diffusion profile is also discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1969
Accession Number
AD0704168

Entities

People

  • Gordon R. Taylor

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Active Electronic Components
  • Bipolar Junction Transistors
  • Diffusion
  • Electronic Components
  • Electronic Equipment
  • Fabrication
  • Materials
  • Pnp Transistors
  • Switching
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.