LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb(0.8)Sn(0.2)Te,

Abstract

Laser emission is obtained from forward biased evaporated metal barriers on degenerate p-PbTe and p-Pb(0.8)Sn(0.2)Te at T = 4.2 degrees K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n-type surface region on p-type samples without chemical doping. Low threshold laser emission has been obtained from these barriers on p-PbTe at a wavelength of 6.4 micrometers and from Pb barriers on p-Pb(0.8)Sn(0.2)Te at a wavelength of 15 micrometers. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1970
Accession Number
AD0706308

Entities

People

  • Arthur R. Calawa
  • James N. Walpole
  • Kenneth W. Nill
  • Theodore C. Harman

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Cooperation
  • Electronics
  • Emission
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Massachusetts
  • Micrometers
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Work Functions

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics