RADIATION EFFECTS IN SILICON AND GERMANIUM.
Abstract
The results of several related studies of radiation effects in silicon and germanium are described. Studies of short-term annealing phenomena in silicon include a comparison of the effects of fusion and fission neutron irradiation on n- and p-type material, an investigation of transient recovery following pulsed electron irradiation, and an analytical treatment of the effects of metastable charge states on short-term annealing in p-type material. A model to explain observations of 'radiation-induced annealing' in terms of trapping is presented. An investigation of various aspects of excess density studies in bulk material was performed, including the use of a Nd:Glass laser to achieve high excitation levels in silicon. A method is presented for determining capture probability temperature dependences in semiconductors. The recombination properties of Co60 gamma-irradiated n-type germanium were determined for low resistivity material and a study of dose effects was performed. Studies were made on the influence of lithium, aluminum, and oxygen on the radiation sensitivity of silicon. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1970
- Accession Number
- AD0707080
Entities
People
- E. G. Wikner
- J. R. Srour
- O. L. Curtis Jr.
- R. F. Bass