Si - ZnS HETEROJUNCTIONS. II. SINGLE CRYSTAL FILMS OF ZINC SULPHIDE ON SILICON,

Abstract

A technique for the growth of single-crystal epitaxial films of zinc sulphide on silicon has been evolved. The film is grown by condensation of vapour sublimed from a zinc sulphide source in ultra-high vacuum. Optical, electron and scanning electron microscopy are used to examine the topography of the films produced, and X-ray and electron diffraction studies are used to evaluate the crystal structure of the deposits and substrates. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1970
Accession Number
AD0707343

Entities

People

  • G. N. Simpson
  • J. S. Hill
  • T. G. R. Rawlins

Tags

DTIC Thesaurus Topics

  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • High Vacuum
  • Microscopy
  • Scanning Electron Microscopy
  • Single Crystals
  • Sulfides
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene