EPITAXIAL GROWTH OF Al2O3 ON SAPPHIRE AND RUBY SUBSTRATES BY CHEMICAL VAPOR DEPOSITION,

Abstract

The growth of Al2O3 on single crystal sapphire and ruby substrates via the net chemical reaction 2 AlCl3(g) + 3 H2O(g) = Al2O3(s) + 6 HCl(g), was investigated in the temperature range from 1400 to 1600C. Deposits that were obtained varied from polycrystalline at lower temperatures to single crystal at the higher ones. Use of a 60 deg. oriented substrate resulted in a better quality, faster growing deposit than did use of 0 deg. and 90 deg. oriented substrates. (Authors)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1970
Accession Number
AD0707378

Entities

People

  • Donald R. Messier
  • Philip Wong

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemical Vapor Deposition
  • Crystals
  • Epitaxial Growth
  • Polycrystals
  • Sapphire
  • Single Crystals
  • Substrates
  • Transition Temperature
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology