THE EFFECT OF STRESS ON THE LUMINESCENCE SPECTRUM OF IRRADIATED SILICON.
Abstract
Silicon crystals which have been irradiated with neutrons, high energy electrons, or gamma-rays at room temperature show two strong luminescence bands in the near infrared. Both bands have a sharp zero-phonon line followed by a series of broad phonon assisted peaks. The higher energy band associated with a zero-phonon line at 0.97 eV is independent of any impurities while the lower energy band with a zero-phonon line at 0.79eV is seen only in silicon containing oxygen. Data on the temperature and stress dependence of the luminescence bands have been taken in order to obtain information on the type of defects and the optical transitions involved. The narrow line widths observed for the zero-phonon lines show that the transitions do not involve a free carrier. The zero-phonon line at 0.79eV is a doublet showing thermal population effects which relate it to two levels in the initial state. The lack of any association with impurities, the annealing, and the stress data for the bands associated with the 0.97 eV zero-phonon line all support an identification of these bands, with divacancy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1970
- Accession Number
- AD0707690
Entities
People
- Colin Elliott Jones
Organizations
- University of Illinois Urbana–Champaign