LOW-TEMPERATURE THERMAL CONDUCTIVITY MEASUREMENTS IN SEMICONDUCTORS.
Abstract
Thermal conductivity measurements have been made at low temperatures on a heavily doped p-type sample of InSb and on the magnetic semiconductors EuO and EuS in the vicinity of their Curie temperatures. Further evidence of an anomaly in the thermal conductivity of EuO in the vicinity of its Curie temperature of 69 K was obtained but during the course of continuing measurements the anomaly disappeared. The cause of the change in behavior is believed due to a breakdown, on a microscopic scale, of the pressed-powder sample. The thermal conductivity of a pressed-powder EuS sample showed a predominantly T squared temperature dependence over the temperature range 13.5 K to 17.6 K. There was no evidence of any anomalous behavior near the Curie temperature of 16.4 K. Extension of thermal conductivity measurements down to 17 K now has made available thermal conductivity values from 17 K to 640 K for a polycrystalline sample of InSb containing 10 to the 20th power acceptors per cc. A theoretical analysis of the results indicates that throughout this temperature range the thermal conductivity is due primarily to high-frequency transverse acoustic phonons with a small contribution due to high-frequency longitudinal phonons. The conductivity due to low-frequency transverse and longitudinal phonons is negligible due to strong scattering by holes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1970
- Accession Number
- AD0707749
Entities
People
- R. Daniel Redin
Organizations
- South Dakota School of Mines and Technology