STRUCTURAL MODEL FOR AMORPHOUS SILICON AND GERMANIUM.
Abstract
A model for amorphous germanium and silicon has been constructed using the random network concept. Each atom has a first coordination number of four, and only a small variation in the nearest neighbor distance is allowed. Non-crystallinity is due to variations in the tetrahedral bond angle and rotations about bonds. No difficulty was encountered in continuing to make the model larger and no difference between the central and outer regions could be observed. The radial distribution function and the density of the model agree well with recent measurements. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1970
- Accession Number
- AD0707772
Entities
People
- D. E. Polk
Organizations
- Harvard University