STUDY OF NEUTRON DAMAGE TO SEMICONDUCTORS USING JUNCTION DEVICES.

Abstract

Detailed measurements on special gated Si p+n diodes yield the damage parameters associated with the three basic current components in p-n junctions. Recombination in the neutral bulk, recombination and generation in the space-charge region, and recombination and generation at the surface are characterized over a wide range of neutron doses and injection levels. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1969
Accession Number
AD0707984

Entities

People

  • W. G. Oldham

Organizations

  • University of California, Berkeley

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Demographic Cohorts
  • Electronics
  • Extrinsic Semiconductors
  • Measurement
  • P-N Junctions
  • Semiconductors
  • Solid State Electronics
  • Space Charge

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Plasma Physics.
  • Snow Cover Descriptors for Reptiles and Their Illustrations.

Technology Areas

  • Microelectronics
  • Space