A STUDY OF TRANSIENT RADIATION EFFECTS ON THE RESPONSE OF STANDARD AND RADIATION-HARDENED INTEGRATED-CIRCUIT OPERATIONAL AMPLIFIERS IN AN ELECTRON BEAM.

Abstract

This study investigates the effects of 1-Musec pulses of 80 - 90 Mev electrons on the standard MuA709 operational amplifier and its radiation-hardened version, the MUA744. The transient responses from the electron beam and from electronic pulses were investigated and compared for each amplifier. Also investigated were the responses of dielectrically isolated NPN and PNP transistors contained in the MuA744, which were further compared with responses obtained from discrete NPN and PNP transistors. The overall transient radiation responses of the MuA709 and MuA744 amplifiers, with several exceptions, were not very different. The same can be said for a comparison of the responses from the MuA744 and discrete NPN and PNP transistors. Based on this study the MuA744 is not superior to the MuA709 by virtue of its radiation hardening. It should be noted, however, that the MuA709 is driven into oscillation by the electron beam while the MuA744 is not. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1969
Accession Number
AD0708393

Entities

People

  • Patric Stam Enright

Organizations

  • Naval Postgraduate School

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Corpuscular Radiation
  • Electron Beams
  • Electronic Amplifier
  • Electrons
  • Hardening
  • Integrated Circuits
  • Operational Amplifiers
  • Pnp Transistors
  • Radiation
  • Radiation Effects
  • Radiation Hardening
  • Standards
  • Transistors

Fields of Study

  • Physics

Readers

  • Aerospace Engineering
  • Electronics Engineering
  • Nuclear and Radiation Engineering.

Technology Areas

  • Directed Energy
  • Microelectronics