PHYSICAL BEHAVIOR OF HIGH FIELD DEVICES.

Abstract

Research was aimed at developing a theory of operation for the junction gate, field effect transistor (FET) in the pinched mode, i.e., in its saturated region. All existing theories for this device deal with the region prior to pinch off; interestingly, nearly all FET applications require operation beyond pinch off. Thus, the need for a more complete theory was self-evident. Final programs were studying the physical behavior of high field devices. Specifically, research was conducted in the study of the photo-response of NnuN structures under high field conditions. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 27, 1970
Accession Number
AD0708899

Entities

People

  • Sorab K. Ghandhi

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Conditions
  • Field Effect Transistors
  • Transistors

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology
  • Theoretical Analysis.