RESEARCH STUDY ON DESIGN OF HIGH TRANSCONDUCTANCE FIELD-EFFECT TRANSISTOR.

Abstract

The program was undertaken to devise means of fabricating a field effect transistor having a high transconductance and a low capacitance. It was originally planned to build this device by growing a P-type layer on an N-type substrate. However, it was found that this could not be done with any repeatability, and therefore P-type substrates were substituted for the N-type. During the program, a method for masking and etching silicon slices to form mesas was developed, and conditions for realizing mesas of uniform height over an entire slice or from slice to slice were found. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 23, 1964
Accession Number
AD0708936

Entities

Organizations

  • Sprague Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Capacitance
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Semiconductor Devices
  • Substrates
  • Transconductance
  • Transistors

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design