GROWTH, PROCESSING, AND CHARACTERIZATION OF beta-SILICON CARBIDE SINGLE CRYSTALS.

Abstract

Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of hydrogen is described. Hall and resistivity measurements and electron spin resonance measurements are discussed. The results show that the quality of the epitaxially grown material is comparable with that of the best solution grown crystals. Processing steps such as oxidation, masking, and etching have been performed and simple electroluminescent diodes have been fabricated. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1970
Accession Number
AD0709257

Entities

People

  • Arne Rosengreen

Organizations

  • SRI International

Tags

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Crystals
  • Electron Spin Resonance
  • Electronic Equipment
  • Magnetic Resonance
  • Materials
  • Measurement
  • Resonance
  • Silicon
  • Silicon Carbide
  • Single Crystals
  • Spin Resonance

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene