DEVELOPMENT OF GaAs INFRARED WINDOW MATERIAL
Abstract
The choice of window material for the 10.6 micron region and high power carbon dioxide lasers is discussed, and reasons for choosing GaAs given. The theory of semi-insulating GaAs is summarized. The growth, electrical properties and optical properties of chromium-doped GaAs are described with particular reference to the 10.6 micron region. The use of other materials such as GaSb, the refinement of te high-resistivity GaAs and the development of large-diameter boules are considered.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1970
- Accession Number
- AD0709576
Entities
People
- Alan G. Thompson