MATHEMATICAL MODELING AND SENSITIVITY ANALYSIS OF RADIATION EFFECTS ON SEMICONDUCTOR JUNCTIONS.
Abstract
The thesis is concerned with the numerical solution of a semiconductor junction recovery from a radiation pulse. The junction is represented by an Ebers-Moll model to account for diffusion current and space-charge capacitance. The radiation pulse is considered as giving rise to a photo-current to which it is related by a linear differential equation. Exact solutions are presented and the recovery time is presented and discussed as a function of several parameters. A simple piecewise linear analysis for a diode circuit is also presented to provide insight into the nature of the transient response and the recovery time. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1970
- Accession Number
- AD0709929
Entities
People
- Leon Eugene Drouin Jr
Organizations
- Naval Postgraduate School