BULK SEMICONDUCTOR LIMITERS.
Abstract
A single, silicon element, iris limiter component was developed for X and K-band operation. Typical limiters have provided good isolation (25 db ) with small low level loss (0.5 dB) and good high power handling capability (20 KW at X-band and 10 KW at Ku-band). Numerous fabrication procedures and element structures were evaluated in order to obtain an optimal element. The use of shallow diffused contacts, a checkerboard configuration, and a thin ( 3 to 5 mils) dot-plane structure proved most desirable. Compensated GaAs elements were investigated. Multiple slit irises and filter techniques were investigated in order to achieve broader bandwidth operation. A three element filter comprised of one active limiter and two passive cavities doubled the 1 dB down bandwidth. Similar broadband performance was achieved with a double slit iris, with improved low level loss, but degraded limiting characteristics. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1970
- Accession Number
- AD0711577
Entities
People
- A. L. Armstrong
- J. N. Park
- K. E. Mortenson
- P. Bakeman
- R. Gutmann
Organizations
- Rensselaer Polytechnic Institute