OXIDE FORMATION IN EVAPORATED THIN FILMS OF TANTALUM.

Abstract

The oxidation of evaporated single crystal Ta films has been carried out in situ in the electron microscope. In order to provide greater assurance that the gas reacting with the Ta film was oxygen rather than nitrogen or carbon vapors residual in the electron microscope column, a vacuum system was designed and assembled to provide auxiliary pumping directly on the sample chamber; a liquid-nitrogen cooled plate was installed in the chamber above the sample to trap contamination; and an oxygen inlet was inserted at the level of the sample itself. Tantalum films of (001) orientation were prepared by evaporation in a separate high-vacuum station, using a 2 kW electron beam gun. Two progressions of oxidation were observed, one under the low oxygen pressure conditions and one under the higher oxygen pressure. The ordered domains producing the 2-fold cubic superlattice are thought to be an early stage of TaO(y), the orthorhombic platelets a later form with the same suboxide designation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1970
Accession Number
AD0711634

Entities

People

  • Frances M. Berting
  • Kenneth R. Lawless

Organizations

  • University of Virginia

Tags

DTIC Thesaurus Topics

  • Crystals
  • Electron Beams
  • Electron Microscopes
  • Electrons
  • Films
  • High Vacuum
  • Microscopes
  • Nitrogen
  • Oxidation
  • Single Crystals
  • Tantalum
  • Thin Films
  • Vacuum

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene