INFLUENCE OF DEFECTS INDUCED BY LOW-ENERGY PROTONS ON DIFFUSION LENGTH OF MINORITY CARRIERS IN p-TYPE SILICON,
Abstract
The authors describe the results of investigations into the effect of irradiation by protons with energies E equals 1-6 MeV on electron diffusion length in p-type silicons. Two types of silicon were investigated: silicon obtained by melt extrusion and doped with boron at a given concentration, and noncrucible, vacuum-grown silicon doped with aluminum in a given concentration. Analysis of the spectral characteristics of n-p-structures revealed variations in the diffusion length of minority current carriers in p-type silicon due to defects induced by proton bombardment. The anomalous results for electron diffusion length after irradiation by 1 and 2 MeV protons is attributed to the diffusion length measurement method. Discrepancy between experimental and theoretical curves for electron diffusion length changes following irradiation by protons with energies E equals 4-6 MeV is attributed to defect annealing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 22, 1970
- Accession Number
- AD0711750
Entities
People
- A. P. Landsman
- G. M. Grigoreva
- L. B. Kreinin
Organizations
- National Air and Space Intelligence Center