DETAILS OF HIGH QUANTUM EFFICIENCY PHOTOEMISSION IN GALLIUM ARSENIDE

Abstract

Considerable interest has been shown in developing a practical photocathode using the GaAs-Cs system. It was felt that a thorough study of the photoemission from vacuum cleaved surfaces would eliminate the variable of surface preparation, and allow a detailed examination of the photoemission process in GaAs. In the process of this examination, new instrumentation allowing high resolution measurement of emitted electron energy distributions and their derivatives was developed, and played a critical role in making sufficient information available from experiment to allow the description of the photoemission process in terms of meaningful quantitative theories. In parallel with other laboratories, a process was developed for applying additional layers of oxygen and cesium to the surface, resulting in a lower vacuum level and an increased quantum efficiency. The report covers in detail the methods and results of the experimental work conducted, and the theories which have been developed to explain the experimental results.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1969
Accession Number
AD0711860

Entities

People

  • Lawrence W. James

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Current Density
  • Distribution Curves
  • Distribution Functions
  • Electron Energy
  • Electron Scattering
  • Electrons
  • Energy
  • Energy Bands
  • High Resolution
  • Measurement
  • Scattering
  • Stratified Fluids

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Quantum Computing