LOW TEMPERATURE SILICON THERMOMETER AND BOLOMETER.
Abstract
By simple diffusion and etching procedures low temperature sensitive surface layers can be prepared on otherwise insulating silicon substrates. Temperature coefficients of the resistance of these layers of the order of unity can be obtained at any temperatures below 20K. The usefulness of the silicon device as a low temperature thermometer and bolometer is demonstrated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1970
- Accession Number
- AD0711960
Entities
People
- H. C. Kirsch
- R. Bachmann
- Theodore H. Geballe
Organizations
- Stanford University