A DESIGN AND EVALUATION OF AN ION IMPLANTATION SYSTEM

Abstract

A machine originally designed as a bakeable, monoenergetic sputtering apparatus was redesigned for use as an ion implantation system. Engineering modifications produced a virtually oil-free high-vacuum system. The base pressure of the system (unbaked) in its present configuration is 1 x 10 to the minus 8th power Torr. A 0.8-microamperes, 6.5-keV nitrogen ion beam was obtained. The machine, after modifications, was studied to determine its feasibility as an ion implantation system. If beam voltages greater than 10 kV are used, the machine will be suitable to perform small-area implants (areas approximately equal to 0.5 sqcm) with dopants available in gaseous form (non-corrosive) ranging in energy from 10 to 30 keV.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1970
Accession Number
AD0712011

Entities

People

  • Stephen P. Plusch

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force Facilities
  • Charged Particles
  • Crystal Lattices
  • Electrical Circuits
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Electrons
  • High Vacuum
  • Implantation
  • Ion Implantation
  • Ion Pumps
  • Ion Sources
  • Ions
  • Materials
  • Semiconductors
  • Vacuum

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Pulsed Power and Plasma Physics.
  • Surface Engineering/Surface Coating Technology.