IMPACT IONIZATION, BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY AND OTHER NONEQUILIBRIUM CARRIER PHENOMENA IN InSb,

Abstract

The hot electron effect, injection, impact ionization and bulk negative differential conductivity are nonequilibrium carrier phenomena that some semiconductors exhibit. In particular, all four phenomena affect conduction in InSb in a strongly interrelated manner. This work shows the interrelationship of these four nonequilibrium phenomena in InSb and describes two new effects: a temporal and spatial relationship between type-N and type-S bulk negative differential conductivity (BNDC) in n-type InSb and the existence of an impact ionization wavefront which is reponsible for the initiation of this carrier generation mechanism in p-type InSb. These results are presented in two parts: Part I contains a discussion of all these nonequilibrium carrier phenomena in n-type InSb, and Part II treats injection and impact ionization in p-type InSb. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1970
Accession Number
AD0712484

Entities

People

  • B. Ancker-johnson
  • C. L. Dick

Organizations

  • Boeing

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conductivity
  • Demographic Cohorts
  • Electronics
  • Electrons
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Ionization
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Wavefronts

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics