PROPERTIES OF p-n JUNCTIONS IN CADMIUM SULFIDE AND CONSTRUCTION OF PHOTOELECTRIC TRANSDUCERS,
Abstract
The development of efficient photoelectric converters based on CdS is described. The photoelectric p-n junctions were made as follows: Cadmium sulfide powder was pressed into small tablets under a pressure of several hundred kilograms per cm(superscript 2). The tablets were baked for 15 min under closely controlled conditions to form pure monocrystals (size, up to 50 mu) on one side of the tablet, i.e., to form the working surface of the converter. This working surface was then immersed for several seconds in a boiling, saturated water solution of copper sulfate to cover it with a thin coating which contained p-type carriers and was presumed to be formed by the chemical reaction given. The coated tablet was then heated at a temperature of 350 degrees centigrade for about 20 sec. The converter was completed by depositing electrodes on both sides of the tablet. Efficiencies of the order of 8 percent were obtained with the described photoelectric converters. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 24, 1970
- Accession Number
- AD0712936
Entities
People
- Rodoslav Stefanov
- Stefan Knev
- Vasil Stoyanov
Organizations
- National Air and Space Intelligence Center