THE RECTIFYING PROPERTIES OF AN ANTIMONY-ANTIMONY SELENIDE DIFFUSED JUNCTION,

Abstract

The rectifying properties were studied for a junction prepared by the reactive diffusion of Se from the vapor phase into the Sb. An analysis of the v amp. characteristic shows that as the thickness of the Sb2Se3 layer increases, the slope of the linear segment in the transmission direction decreases; the right branch shifts to the right, which corresponds to a lower value of the d.c. at the given voltage. The low values of the d.c. (10-20 ma.) and the smoother increase in the d.c. with increasing voltage are due to the large resistance of the vol. of the semiconducting film. For low voltages, the d.c. increases exponentially with the applied voltage. The rectification coefficient depends on the layer thickness, and is 1000 to 10,000 for a 3-5 micrometer film. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 28, 1970
Accession Number
AD0712941

Entities

People

  • N. N. Koren
  • N. N. Sirota

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Antimony
  • Coefficients
  • Diffusion
  • Films
  • Low Voltage
  • Micrometers
  • Phase
  • Resistance
  • Semiconducting Films
  • Thickness
  • Vapor Phases
  • Voltage

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Thin Film Deposition Science.