DIELECTRIC FIELD COMPUTATIONS IN SEMICONDUCTOR OXIDE INTEGRATED CIRCUITS.

Abstract

The report deals with the application of the point relaxation method for the numerical solution of Laplace's or Poisson's equations in multi-dielectric regions in semiconductor integrated circuits. In particular, the type of geometry considered in this report is a rectangular or square region whose boundary potentials may or may not be specified, with a dielectric interface parallel to one of the boundaries. This type of problem is very difficult to solve analytically and yet it is an important problem in planar integrated circuit analysis. The structure is essentially the same as the oxide over silicon or as the junction regions in such a device. Often the electrical field or the static temperature distribution of such regions are required and the research described in this report provides a technique for determining such information. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1970
Accession Number
AD0713476

Entities

People

  • Don L. Cannon

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Circuit Analysis
  • Circuits
  • Compound Semiconductors
  • Computations
  • Electronics
  • Equations
  • Geometry
  • Information Processing
  • Information Systems
  • Integrated Circuits
  • Mathematics
  • Metal Oxide Semiconductors
  • Semiconductors
  • Solid State Electronics

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Microwave Engineering.

Technology Areas

  • Microelectronics